| PART |
Description |
Maker |
| DS1220Y-150-IND DS1220Y-200-IND DS1220Y-100-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1650Y-70-IND DS1650Y-100-IND DS1650Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Bourns, Inc.
Maxim Integrated Products, Inc.
|
| DS1250Y-70 DS1250Y-70-IND DS1250Y-100-IND DS1250AB |
NVRAM (Battery Based)
From old datasheet system
NOVRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
|
Dallas Semiconductor Corp
|
| M40Z111 M40Z111MH6 M40Z111MH6TR M40Z111WMH6 M40Z11 |
NVRAM CONTROLLER FOR UP TO TWO LPSRAM
5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| UDS-3611H UDS-3612H UDS-3613H UDS-3614H UDN-3612M |
3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor
5.0 or 3.0V, 512 Bit (64 Bit x8) Serial RTC (SPI) SRAM and NVRAM Supervisor
Serial real-time clock
25 A standard and Snubberless" triacs
25 A standard and Snubberless" triacs 双外围驱动器
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM 双外围驱动器
|
Motorola Mobility Holdings, Inc.
|
| GN01096B |
GaAs IC(with built-in ferroelectric)
|
Panasonic Semiconductor
|
| DS2217-120 DS2217-150 |
NVRAM(BatteryBased)
|
|
| M40Z300MQ |
NVRAM CONTROLLER for up to EIGHT LPSRAM
|
ST Microelectronics
|
| M40Z300MH1E M40Z300MH1F M40Z300MH6E M40Z300MH6F M4 |
5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
| M40Z11107 M40Z111WMH6E M40Z111WMH6F M4Z32-BR00SH1 |
5V or 3V NVRAM supervisor for up to two LPSRAMs
|
STMicroelectronics
|
